US6M1TR Dual N/P-Channel MOSFET, ±1 (PChannel) A, ±1.4 (NChannel) A, 20 (PChannel) V, 30 (NChannel) V US6M1, 6-Pin TUMT [US6M1TR]; 183-5564
by ROHM
0₫
Mã kho: 1835564
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THÔNG SỐ KỸ THUẬT | |
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Channel Type | N, P |
Maximum Continuous Drain Current | ±1 (PChannel) A, ±1.4 (NChannel) A |
Maximum Drain Source Voltage | 20 V |
Package Type | TUMT |
Mounting Type | Surface Mount |
Pin Count | 6 |
Maximum Drain Source Resistance | 800 mΩ |
Channel Mode | Enhancement |
Maximum Gate Threshold Voltage | 2V |
Minimum Gate Threshold Voltage | 0.7V |
Maximum Power Dissipation | 1 W |
Maximum Gate Source Voltage | -12 (P-Channel) V, +20 (N-Channel) V |
Number of Elements per Chip | 2 |
Width | 1.7mm |
Forward Diode Voltage | 1.2V |
Maximum Operating Temperature | 150 °C |
Series | US6M1 |
Height | 0.75mm |
Typical Gate Charge @ Vgs | 2.1 nC @ 4.5 V |
Length | 2mm |