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SCT2H12NYTB SiC N-Channel MOSFET, 4 A, 1700 V, 2 + Tab-Pin TO-268 ROHM [SCT2H12NYTB]; 148-6940
by ROHM
0₫
Mã kho: 1486940
Liên hệ để có giá tốt (Vietnam: 0898.332.898, E-mail: SKF@nguyenxuong.com)
THÔNG SỐ KỸ THUẬT | |
---|---|
Channel Type | N |
Maximum Continuous Drain Current | 0.166666666666667 |
Maximum Drain Source Voltage | 1700 V |
Package Type | TO-268 |
Mounting Type | Surface Mount |
Pin Count | 2 + Tab |
Maximum Drain Source Resistance | 1.71 Ω |
Channel Mode | Enhancement |
Maximum Gate Threshold Voltage | 4V |
Minimum Gate Threshold Voltage | 1.6V |
Maximum Power Dissipation | 44 W |
Transistor Configuration | Single |
Maximum Gate Source Voltage | 22 V |
Number of Elements per Chip | 1 |
Width | 13.9mm |
Transistor Material | SiC |
Length | 15.95mm |
Forward Diode Voltage | 4.3V |
Maximum Operating Temperature | +175 °C |
Typical Gate Charge @ Vgs | 14 nC @ 18 V |
Height | 5mm |