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RQ3E120ATTB P-Channel MOSFET, 39 A, 30 V RQ3E120AT, 8-Pin HSMT ROHM [RQ3E120ATTB]; 133-3293
by ROHM
0₫
Mã kho: 1333293
Liên hệ để có giá tốt (Vietnam: 0898.332.898, E-mail: SKF@nguyenxuong.com)
THÔNG SỐ KỸ THUẬT | |
---|---|
Channel Type | P |
Maximum Continuous Drain Current | 39 A |
Maximum Drain Source Voltage | 30 V |
Package Type | HSMT |
Mounting Type | Surface Mount |
Pin Count | 8 |
Maximum Drain Source Resistance | 11.3 mΩ |
Channel Mode | Enhancement |
Maximum Gate Threshold Voltage | 2.5V |
Minimum Gate Threshold Voltage | 1V |
Maximum Power Dissipation | 20 W |
Transistor Configuration | Single |
Maximum Gate Source Voltage | -20 V, +20 V |
Number of Elements per Chip | 1 |
Height | 0.85mm |
Width | 3.1mm |
Series | RQ3E120AT |
Typical Gate Charge @ Vgs | 62 nC @ 10 V |
Length | 3.3mm |
Forward Diode Voltage | 1.2V |
Maximum Operating Temperature | +150 °C |