RJ1P12BBDTLL N-Channel MOSFET, 120 A, 100 V RJ1P12BBD, 3-Pin D2PAK ROHM [RJ1P12BBDTLL]; 183-5418
by ROHM
0₫
Mã kho: 1835418
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| THÔNG SỐ KỸ THUẬT | |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 120 A |
| Maximum Drain Source Voltage | 100 V |
| Package Type | TO-263AB |
| Mounting Type | Surface Mount |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 7.8 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 4V |
| Minimum Gate Threshold Voltage | 2V |
| Maximum Power Dissipation | 178 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | ±20 V |
| Number of Elements per Chip | 1 |
| Width | 9.2mm |
| Length | 10.4mm |
| Forward Diode Voltage | 1.2V |
| Minimum Operating Temperature | -55 °C |
| Maximum Operating Temperature | 150 °C |
| Series | RJ1P12BBD |
| Height | 4.7mm |
| Typical Gate Charge @ Vgs | 80 nC @ 10 V |