PMDT290UNE,115 Dual N-Channel MOSFET, 800 mA, 20 V, 6-Pin SOT-666 Nexperia [PMDT290UNE,115]; 165-9828
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Mã kho: 1659828
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| THÔNG SỐ KỸ THUẬT | |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 800 mA |
| Maximum Drain Source Voltage | 20 V |
| Package Type | SOT-666 |
| Mounting Type | Surface Mount |
| Pin Count | 6 |
| Maximum Drain Source Resistance | 380 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 0.95V |
| Minimum Gate Threshold Voltage | 0.5V |
| Maximum Power Dissipation | 1.09 W |
| Transistor Configuration | Isolated |
| Maximum Gate Source Voltage | -8 V, +8 V |
| Number of Elements per Chip | 2 |
| Width | 1.3mm |
| Transistor Material | Si |
| Maximum Operating Temperature | +150 °C |
| Length | 1.7mm |
| Typical Gate Charge @ Vgs | 0.45 nC @ 4.5 V |
| Minimum Operating Temperature | -55 °C |
| Height | 0.6mm |