PHKD6N02LT,518 Dual N-Channel MOSFET, 10.9 A, 20 V, 8-Pin SOIC Nexperia [PHKD6N02LT,518]; 166-1584
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Mã kho: 1661584
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THÔNG SỐ KỸ THUẬT | |
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Channel Type | N |
Maximum Continuous Drain Current | 10.9 A |
Maximum Drain Source Voltage | 20 V |
Package Type | SOIC |
Mounting Type | Surface Mount |
Pin Count | 8 |
Maximum Drain Source Resistance | 20 mΩ |
Channel Mode | Enhancement |
Maximum Gate Threshold Voltage | 1.5V |
Minimum Gate Threshold Voltage | 0.5V |
Maximum Power Dissipation | 4.17 W |
Transistor Configuration | Isolated |
Maximum Gate Source Voltage | -12 V, +12 V |
Number of Elements per Chip | 2 |
Minimum Operating Temperature | -55 °C |
Height | 1.45mm |
Width | 4mm |
Transistor Material | Si |
Maximum Operating Temperature | +150 °C |
Length | 5mm |
Typical Gate Charge @ Vgs | 15.3 nC @ 5 V |