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MMIX1T550N055T2 N-Channel MOSFET, 550 A, 55 V GigaMOS, HiperFET, 24-Pin SMPD IXYS [MMIX1T550N055T2]; 875-2500
by IXYS
0₫
Mã kho: 8752500
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THÔNG SỐ KỸ THUẬT | |
---|---|
Channel Type | N |
Maximum Continuous Drain Current | 550 A |
Maximum Drain Source Voltage | 55 V |
Package Type | SMPD |
Mounting Type | Surface Mount |
Pin Count | 24 |
Maximum Drain Source Resistance | 1.3 mΩ |
Channel Mode | Enhancement |
Maximum Gate Threshold Voltage | 3.8V |
Maximum Power Dissipation | 830 W |
Transistor Configuration | Single |
Maximum Gate Source Voltage | -20 V, +20 V |
Number of Elements per Chip | 1 |
Transistor Material | Si |
Minimum Operating Temperature | -55 °C |
Typical Gate Charge @ Vgs | 595 nC @ 10 V |
Forward Diode Voltage | 1.2V |
Width | 23.25mm |
Series | GigaMOS, HiperFET |
Height | 5.7mm |
Length | 25.25mm |
Maximum Operating Temperature | +175 °C |