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SPB07N60C3ATMA1 N-Channel MOSFET, 7.3 A, 650 V CoolMOS C3, 3-Pin D2PAK Infineon [SPB07N60C3ATMA1]; 165-5659
by Infineon
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Mã kho: 1655659
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THÔNG SỐ KỸ THUẬT | |
---|---|
Channel Type | N |
Maximum Continuous Drain Current | 7.3 A |
Maximum Drain Source Voltage | 650 V |
Package Type | D2PAK (TO-263) |
Mounting Type | Surface Mount |
Pin Count | 3 |
Maximum Drain Source Resistance | 600 mΩ |
Channel Mode | Enhancement |
Maximum Gate Threshold Voltage | 3.9V |
Minimum Gate Threshold Voltage | 2.1V |
Maximum Power Dissipation | 83 W |
Transistor Configuration | Single |
Maximum Gate Source Voltage | -30 V, +30 V |
Number of Elements per Chip | 1 |
Transistor Material | Si |
Maximum Operating Temperature | +150 °C |
Width | 9.45mm |
Height | 4.572mm |
Minimum Operating Temperature | -55 °C |
Series | CoolMOS C3 |
Length | 10.31mm |
Typical Gate Charge @ Vgs | 21 nC @ 10 V |