IRLU3636PBF N-Channel MOSFET, 99 A, 60 V HEXFET, 3-Pin IPAK Infineon [IRLU3636PBF]; 864-1028
by Infineon
0₫
Mã kho: 8641028
Liên hệ để có giá tốt (Vietnam: 0898.332.898, E-mail: SKF@nguyenxuong.com)
| THÔNG SỐ KỸ THUẬT | |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 99 A |
| Maximum Drain Source Voltage | 60 V |
| Package Type | IPAK (TO-251) |
| Mounting Type | Through Hole |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 8.3 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 2.5V |
| Minimum Gate Threshold Voltage | 1V |
| Maximum Power Dissipation | 143 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -16 V, +16 V |
| Number of Elements per Chip | 1 |
| Width | 2.39mm |
| Series | HEXFET |
| Height | 7.49mm |
| Maximum Operating Temperature | +175 °C |
| Length | 6.73mm |
| Transistor Material | Si |
| Minimum Operating Temperature | -55 °C |
| Typical Gate Charge @ Vgs | 33 nC @ 4.5 V |