IRFS52N15DPBF N-Channel MOSFET, 51 A, 150 V HEXFET, 3-Pin D2PAK Infineon [IRFS52N15DPBF]; 166-0959
by Infineon
0₫
Mã kho: 1660959
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| THÔNG SỐ KỸ THUẬT | |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 51 A |
| Maximum Drain Source Voltage | 150 V |
| Package Type | D2PAK (TO-263) |
| Mounting Type | Surface Mount |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 32 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 5V |
| Minimum Gate Threshold Voltage | 3V |
| Maximum Power Dissipation | 3.8 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -30 V, +30 V |
| Number of Elements per Chip | 1 |
| Series | HEXFET |
| Maximum Operating Temperature | +175 °C |
| Transistor Material | Si |
| Width | 9.65mm |
| Height | 4.83mm |
| Minimum Operating Temperature | -55 °C |
| Typical Gate Charge @ Vgs | 60 nC @ 10 V |
| Length | 10.67mm |