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IRFS31N20DPBF N-Channel MOSFET, 31 A, 200 V HEXFET, 3-Pin D2PAK Infineon [IRFS31N20DPBF]; 539-4990
by Infineon
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Mã kho: 5394990
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THÔNG SỐ KỸ THUẬT | |
---|---|
Channel Type | N |
Maximum Continuous Drain Current | 31 A |
Maximum Drain Source Voltage | 200 V |
Package Type | D2PAK (TO-263) |
Mounting Type | Surface Mount |
Pin Count | 3 |
Maximum Drain Source Resistance | 82 mΩ |
Channel Mode | Enhancement |
Maximum Gate Threshold Voltage | 5.5V |
Minimum Gate Threshold Voltage | 3V |
Maximum Power Dissipation | 3.1 W |
Transistor Configuration | Single |
Maximum Gate Source Voltage | -30 V, +30 V |
Number of Elements per Chip | 1 |
Height | 4.83mm |
Transistor Material | Si |
Series | HEXFET |
Maximum Operating Temperature | +175 °C |
Width | 9.65mm |
Minimum Operating Temperature | -55 °C |
Typical Gate Charge @ Vgs | 70 nC @ 10 V |
Length | 10.67mm |