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IRF7910TRPBF Dual N-Channel MOSFET, 10 A, 12 V HEXFET, 8-Pin SOIC Infineon [IRF7910TRPBF]; 165-8053
by Infineon
0₫
Mã kho: 1658053
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THÔNG SỐ KỸ THUẬT | |
---|---|
Channel Type | N |
Maximum Continuous Drain Current | 0.416666666666667 |
Maximum Drain Source Voltage | 12 V |
Package Type | SOIC |
Mounting Type | Surface Mount |
Pin Count | 8 |
Maximum Drain Source Resistance | 50 mΩ |
Channel Mode | Enhancement |
Maximum Gate Threshold Voltage | 2V |
Minimum Gate Threshold Voltage | 0.6V |
Maximum Power Dissipation | 2 W |
Transistor Configuration | Isolated |
Maximum Gate Source Voltage | -12 V, +12 V |
Number of Elements per Chip | 2 |
Forward Diode Voltage | 1.3V |
Transistor Material | Si |
Width | 4mm |
Typical Gate Charge @ Vgs | 17 nC @ 4.5 V |
Minimum Operating Temperature | -55 °C |
Length | 5mm |
Maximum Operating Temperature | +150 °C |
Series | HEXFET |
Height | 1.5mm |