IRF7907TRPBF Dual N-Channel MOSFET, 9.1 A, 11 A, 30 V HEXFET, 8-Pin SOIC Infineon [IRF7907TRPBF]; 130-0964
by Infineon
0₫
Mã kho: 1300964
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| THÔNG SỐ KỸ THUẬT | |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 9.1 A, 11 A |
| Maximum Drain Source Voltage | 30 V |
| Package Type | SOIC |
| Mounting Type | Surface Mount |
| Pin Count | 8 |
| Maximum Drain Source Resistance | 13.7 mΩ, 20.5 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 2.35V |
| Minimum Gate Threshold Voltage | 1.35V |
| Maximum Power Dissipation | 2 W |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Number of Elements per Chip | 2 |
| Minimum Operating Temperature | -55 °C |
| Typical Gate Charge @ Vgs | 6.7 nC @ 4.5 V, 14 nC @ 4.5 V |
| Height | 1.5mm |
| Series | HEXFET |
| Maximum Operating Temperature | +150 °C |
| Length | 5mm |
| Forward Diode Voltage | 1V |
| Width | 4mm |