IRF7105TRPBF Dual N/P-Channel MOSFET, 2.3 A, 3.5 A, 25 V HEXFET, 8-Pin SOIC Infineon [IRF7105TRPBF]; 165-5912
by Infineon
0₫
Mã kho: 1655912
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| THÔNG SỐ KỸ THUẬT | |
|---|---|
| Channel Type | N, P |
| Maximum Continuous Drain Current | 2.3 A, 3.5 A |
| Maximum Drain Source Voltage | 25 V |
| Package Type | SOIC |
| Mounting Type | Surface Mount |
| Pin Count | 8 |
| Maximum Drain Source Resistance | 160 mΩ, 400 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 3V |
| Minimum Gate Threshold Voltage | 1V |
| Maximum Power Dissipation | 2 W |
| Transistor Configuration | Isolated |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Number of Elements per Chip | 2 |
| Width | 4mm |
| Transistor Material | Si |
| Series | HEXFET |
| Height | 1.5mm |
| Typical Gate Charge @ Vgs | 9.4 nC @ 10 V, 10 nC @ 10 V |
| Maximum Operating Temperature | +150 °C |
| Length | 5mm |
| Minimum Operating Temperature | -55 °C |