IRF640NSTRLPBF N-Channel MOSFET, 18 A, 200 V HEXFET, 3-Pin D2PAK Infineon [IRF640NSTRLPBF]; 831-2853
by Infineon
0₫
Mã kho: 8312853
Liên hệ để có giá tốt (Vietnam: 0898.332.898, E-mail: SKF@nguyenxuong.com)
THÔNG SỐ KỸ THUẬT | |
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Channel Type | N |
Maximum Continuous Drain Current | 18 A |
Maximum Drain Source Voltage | 200 V |
Package Type | D2PAK (TO-263) |
Mounting Type | Surface Mount |
Pin Count | 3 |
Maximum Drain Source Resistance | 150 mΩ |
Channel Mode | Enhancement |
Maximum Gate Threshold Voltage | 4V |
Minimum Gate Threshold Voltage | 2V |
Maximum Power Dissipation | 150 W |
Transistor Configuration | Single |
Maximum Gate Source Voltage | -20 V, +20 V |
Number of Elements per Chip | 1 |
Width | 9.65mm |
Transistor Material | Si |
Minimum Operating Temperature | -55 °C |
Series | HEXFET |
Typical Gate Charge @ Vgs | 67 nC @ 10 V |
Length | 10.67mm |
Height | 4.83mm |
Maximum Operating Temperature | +175 °C |