IRF640NLPBF N-Channel MOSFET, 18 A, 200 V HEXFET, 3-Pin I2PAK Infineon [IRF640NLPBF]; 831-2859
by Infineon
0₫
Mã kho: 8312859
Liên hệ để có giá tốt (Vietnam: 0898.332.898, E-mail: SKF@nguyenxuong.com)
| THÔNG SỐ KỸ THUẬT | |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 18 A |
| Maximum Drain Source Voltage | 200 V |
| Package Type | I2PAK (TO-262) |
| Mounting Type | Through Hole |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 150 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 4V |
| Minimum Gate Threshold Voltage | 2V |
| Maximum Power Dissipation | 150 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Number of Elements per Chip | 1 |
| Typical Gate Charge @ Vgs | 67 nC @ 10 V |
| Width | 4.83mm |
| Minimum Operating Temperature | -55 °C |
| Height | 11.3mm |
| Series | HEXFET |
| Maximum Operating Temperature | +175 °C |
| Length | 10.67mm |
| Transistor Material | Si |