IRF630NSTRLPBF N-Channel MOSFET, 9.3 A, 200 V HEXFET, 3-Pin D2PAK Infineon [IRF630NSTRLPBF]; 165-8186
by Infineon
0₫
Mã kho: 1658186
Liên hệ để có giá tốt (Vietnam: 0898.332.898, E-mail: SKF@nguyenxuong.com)
| THÔNG SỐ KỸ THUẬT | |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 9.3 A |
| Maximum Drain Source Voltage | 200 V |
| Package Type | D2PAK (TO-263) |
| Mounting Type | Surface Mount |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 300 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 4V |
| Minimum Gate Threshold Voltage | 2V |
| Maximum Power Dissipation | 82 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Number of Elements per Chip | 1 |
| Series | HEXFET |
| Minimum Operating Temperature | -55 °C |
| Width | 11.3mm |
| Length | 10.67mm |
| Typical Gate Charge @ Vgs | 35 nC @ 10 V |
| Forward Diode Voltage | 1.3V |
| Transistor Material | Si |
| Height | 4.83mm |
| Maximum Operating Temperature | +175 °C |