IPP65R660CFDXKSA1 N-Channel MOSFET, 6 A, 700 V CoolMOS CFD, 3-Pin TO-220 Infineon [IPP65R660CFDXKSA1]; 165-5227
by Infineon
0₫
Mã kho: 1655227
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| THÔNG SỐ KỸ THUẬT | |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 0.25 |
| Maximum Drain Source Voltage | 700 V |
| Package Type | TO-220 |
| Mounting Type | Through Hole |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 660 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 4.5V |
| Minimum Gate Threshold Voltage | 3.5V |
| Maximum Power Dissipation | 62.5 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -30 V, +30 V |
| Number of Elements per Chip | 1 |
| Width | 4.57mm |
| Height | 15.95mm |
| Typical Gate Charge @ Vgs | 22 nC @ 10 V |
| Maximum Operating Temperature | +150 °C |
| Transistor Material | Si |
| Series | CoolMOS CFD |
| Minimum Operating Temperature | -55 °C |
| Length | 10.36mm |