IPP041N12N3GXKSA1 N-Channel MOSFET, 120 A, 120 V OptiMOS 3, 3-Pin TO-220 Infineon [IPP041N12N3GXKSA1]; 145-9320
by Infineon
0₫
Mã kho: 1459320
Liên hệ để có giá tốt (Vietnam: 0898.332.898, E-mail: SKF@nguyenxuong.com)
| THÔNG SỐ KỸ THUẬT | |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 120 A |
| Maximum Drain Source Voltage | 120 V |
| Package Type | TO-220 |
| Mounting Type | Through Hole |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 4.1 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 4V |
| Minimum Gate Threshold Voltage | 2V |
| Maximum Power Dissipation | 300 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Number of Elements per Chip | 1 |
| Width | 4.57mm |
| Minimum Operating Temperature | -55 °C |
| Series | OptiMOS 3 |
| Maximum Operating Temperature | +175 °C |
| Transistor Material | Si |
| Forward Diode Voltage | 1.2V |
| Length | 10.36mm |
| Typical Gate Charge @ Vgs | 158 nC |
| Height | 15.95mm |