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IPI147N12N3GAKSA1 N-Channel MOSFET, 56 A, 120 V OptiMOS 3, 3-Pin I2PAK Infineon [IPI147N12N3GAKSA1]; 145-9313
by Infineon
0₫
Mã kho: 1459313
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THÔNG SỐ KỸ THUẬT | |
---|---|
Channel Type | N |
Maximum Continuous Drain Current | 56 A |
Maximum Drain Source Voltage | 120 V |
Package Type | I2PAK (TO-262) |
Mounting Type | Through Hole |
Pin Count | 3 |
Maximum Drain Source Resistance | 14.7 mΩ |
Channel Mode | Enhancement |
Maximum Gate Threshold Voltage | 4V |
Minimum Gate Threshold Voltage | 2V |
Maximum Power Dissipation | 107 W |
Transistor Configuration | Single |
Maximum Gate Source Voltage | -20 V, +20 V |
Number of Elements per Chip | 1 |
Minimum Operating Temperature | -55 °C |
Transistor Material | Si |
Forward Diode Voltage | 1.2V |
Length | 10.36mm |
Width | 4.572mm |
Typical Gate Charge @ Vgs | 37 nC @ 10 V |
Height | 9.45mm |
Series | OptiMOS 3 |
Maximum Operating Temperature | +175 °C |