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IPD70N10S3L12ATMA1 N-Channel MOSFET, 70 A, 100 V OptiMOS T, 3-Pin DPAK Infineon [IPD70N10S3L12ATMA1]; 165-7524
by Infineon
0₫
Mã kho: 1657524
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THÔNG SỐ KỸ THUẬT | |
---|---|
Channel Type | N |
Maximum Continuous Drain Current | 70 A |
Maximum Drain Source Voltage | 100 V |
Package Type | DPAK (TO-252) |
Mounting Type | Surface Mount |
Pin Count | 3 |
Maximum Drain Source Resistance | 15.2 mΩ |
Channel Mode | Enhancement |
Maximum Gate Threshold Voltage | 2.4V |
Minimum Gate Threshold Voltage | 1.2V |
Maximum Power Dissipation | 125 W |
Transistor Configuration | Single |
Maximum Gate Source Voltage | -20 V, +20 V |
Number of Elements per Chip | 1 |
Series | OptiMOS T |
Length | 6.5mm |
Maximum Operating Temperature | +175 °C |
Minimum Operating Temperature | -55 °C |
Transistor Material | Si |
Typical Gate Charge @ Vgs | 59 nC @ 10 V |
Height | 2.3mm |
Width | 6.22mm |