IPD60R800CEAUMA1 N-Channel MOSFET, 8.4 A, 650 V CoolMOS CE, 3-Pin DPAK Infineon [IPD60R800CEAUMA1]; 168-5913
by Infineon
0₫
Mã kho: 1685913
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THÔNG SỐ KỸ THUẬT | |
---|---|
Channel Type | N |
Maximum Continuous Drain Current | 8.4 A |
Maximum Drain Source Voltage | 650 V |
Package Type | DPAK (TO-252) |
Mounting Type | Surface Mount |
Pin Count | 3 |
Maximum Drain Source Resistance | 800 mΩ |
Channel Mode | Enhancement |
Maximum Gate Threshold Voltage | 3.5V |
Minimum Gate Threshold Voltage | 2.5V |
Maximum Power Dissipation | 74 W |
Maximum Gate Source Voltage | -30 V, +30 V |
Number of Elements per Chip | 1 |
Width | 6.22mm |
Height | 2.41mm |
Minimum Operating Temperature | -40 °C |
Series | CoolMOS CE |
Forward Diode Voltage | 0.9V |
Typical Gate Charge @ Vgs | 17.2 nC @ 10 V |
Maximum Operating Temperature | +150 °C |
Length | 6.73mm |