IPD60R600E6BTMA1 N-Channel MOSFET, 7.3 A, 650 V CoolMOS E6, 3-Pin DPAK Infineon [IPD60R600E6BTMA1]; 168-8582
by Infineon
0₫
Mã kho: 1688582
Liên hệ để có giá tốt (Vietnam: 0898.332.898, E-mail: SKF@nguyenxuong.com)
THÔNG SỐ KỸ THUẬT | |
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Channel Type | N |
Maximum Continuous Drain Current | 7.3 A |
Maximum Drain Source Voltage | 650 V |
Package Type | DPAK (TO-252) |
Mounting Type | Surface Mount |
Pin Count | 3 |
Maximum Drain Source Resistance | 600 mΩ |
Channel Mode | Enhancement |
Maximum Gate Threshold Voltage | 3.5V |
Minimum Gate Threshold Voltage | 2.5V |
Maximum Power Dissipation | 63 W |
Transistor Configuration | Single |
Maximum Gate Source Voltage | -30 V, +30 V |
Number of Elements per Chip | 1 |
Width | 6.22mm |
Height | 2.41mm |
Series | CoolMOS E6 |
Maximum Operating Temperature | +150 °C |
Transistor Material | Si |
Length | 6.73mm |
Minimum Operating Temperature | -55 °C |
Typical Gate Charge @ Vgs | 20.5 nC |