IPB80P04P4L06ATMA1 P-Channel MOSFET, 80 A, 40 V OptiMOS P, 3-Pin D2PAK Infineon [IPB80P04P4L06ATMA1]; 857-4552
by Infineon
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Mã kho: 8574552
Liên hệ để có giá tốt (Vietnam: 0898.332.898, E-mail: SKF@nguyenxuong.com)
THÔNG SỐ KỸ THUẬT | |
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Channel Type | P |
Maximum Continuous Drain Current | 80 A |
Maximum Drain Source Voltage | 40 V |
Package Type | D2PAK (TO-263) |
Mounting Type | Surface Mount |
Pin Count | 3 |
Maximum Drain Source Resistance | 10.8 mΩ |
Channel Mode | Enhancement |
Maximum Gate Threshold Voltage | 2.2V |
Minimum Gate Threshold Voltage | 1.2V |
Maximum Power Dissipation | 88 W |
Transistor Configuration | Single |
Maximum Gate Source Voltage | -16 V, +16 V |
Number of Elements per Chip | 1 |
Width | 9.25mm |
Minimum Operating Temperature | -55 °C |
Transistor Material | Si |
Typical Gate Charge @ Vgs | 80 nC @ 10 V |
Maximum Operating Temperature | +175 °C |
Series | OptiMOS P |
Height | 4.4mm |
Length | 10mm |