IPB80N03S4L02ATMA1 N-Channel MOSFET, 80 A, 30 V OptiMOS T2, 3-Pin D2PAK Infineon [IPB80N03S4L02ATMA1]; 145-9481
by Infineon
0₫
Mã kho: 1459481
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THÔNG SỐ KỸ THUẬT | |
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Channel Type | N |
Maximum Continuous Drain Current | 80 A |
Maximum Drain Source Voltage | 30 V |
Package Type | D2PAK (TO-263) |
Mounting Type | Surface Mount |
Pin Count | 3 |
Maximum Drain Source Resistance | 3.2 mΩ |
Channel Mode | Enhancement |
Maximum Gate Threshold Voltage | 2.2V |
Minimum Gate Threshold Voltage | 1V |
Maximum Power Dissipation | 136 W |
Transistor Configuration | Single |
Maximum Gate Source Voltage | -16 V, +16 V |
Number of Elements per Chip | 1 |
Transistor Material | Si |
Minimum Operating Temperature | -55 °C |
Width | 9.25mm |
Length | 10mm |
Typical Gate Charge @ Vgs | 110 nC @ 10 V |
Maximum Operating Temperature | +175 °C |
Series | OptiMOS T2 |
Height | 4.4mm |