IPB180N10S402ATMA1 N-Channel MOSFET, 180 A, 100 V IPB180N10S4-02, 7 + Tab-Pin D2PAK Infineon [IPB180N10S402ATMA1]; 170-2286
by Infineon
0₫
Mã kho: 1702286
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| THÔNG SỐ KỸ THUẬT | |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 180 A |
| Maximum Drain Source Voltage | 100 V |
| Package Type | TO-263 |
| Mounting Type | Surface Mount |
| Pin Count | 7 + Tab |
| Maximum Drain Source Resistance | 2.5 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 3.5V |
| Minimum Gate Threshold Voltage | 2V |
| Maximum Power Dissipation | 300 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | 20 V |
| Number of Elements per Chip | 1 |
| Forward Diode Voltage | 1.2V |
| Minimum Operating Temperature | -55 °C |
| Width | 10.25mm |
| Maximum Operating Temperature | +175 °C |
| Series | IPB180N10S4-02 |
| Height | 4.4mm |
| Typical Gate Charge @ Vgs | 156 nC @ 10 V |
| Length | 10mm |