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IPB180N06S4H1ATMA2 N-Channel MOSFET, 180 A, 60 V OptiMOS T2, 7-Pin D2PAK Infineon [IPB180N06S4H1ATMA2]; 827-5182
by Infineon
0₫
Mã kho: 8275182
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THÔNG SỐ KỸ THUẬT | |
---|---|
Channel Type | N |
Maximum Continuous Drain Current | 180 A |
Maximum Drain Source Voltage | 60 V |
Package Type | D2PAK (TO-263) |
Mounting Type | Surface Mount |
Pin Count | 7 |
Maximum Drain Source Resistance | 1.7 mΩ |
Channel Mode | Enhancement |
Maximum Gate Threshold Voltage | 4V |
Minimum Gate Threshold Voltage | 2V |
Maximum Power Dissipation | 250 W |
Transistor Configuration | Single |
Maximum Gate Source Voltage | -20 V, +20 V |
Number of Elements per Chip | 1 |
Width | 9.45mm |
Height | 4.57mm |
Series | OptiMOS T2 |
Maximum Operating Temperature | +175 °C |
Length | 10.31mm |
Transistor Material | Si |
Minimum Operating Temperature | -55 °C |
Typical Gate Charge @ Vgs | 208 nC @ 10 V |