IPB067N08N3GATMA1 N-Channel MOSFET, 80 A, 80 V OptiMOS 3, 3-Pin D2PAK Infineon [IPB067N08N3GATMA1]; 110-7099
by Infineon
0₫
Mã kho: 1107099
Liên hệ để có giá tốt (Vietnam: 0898.332.898, E-mail: SKF@nguyenxuong.com)
| THÔNG SỐ KỸ THUẬT | |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 80 A |
| Maximum Drain Source Voltage | 80 V |
| Package Type | D2PAK (TO-263) |
| Mounting Type | Surface Mount |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 12.3 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 3.5V |
| Minimum Gate Threshold Voltage | 2V |
| Maximum Power Dissipation | 136 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Number of Elements per Chip | 1 |
| Width | 9.45mm |
| Height | 4.57mm |
| Forward Diode Voltage | 1.2V |
| Maximum Operating Temperature | +175 °C |
| Typical Gate Charge @ Vgs | 42 nC @ 10 V |
| Minimum Operating Temperature | -55 °C |
| Length | 10.31mm |
| Transistor Material | Si |
| Series | OptiMOS 3 |