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BSP295H6327XTSA1 N-Channel MOSFET, 1.8 A, 60 V SIPMOS, 3+Tab-Pin SOT-223 Infineon [BSP295H6327XTSA1]; 911-4827
by Infineon
0₫
Mã kho: 9114827
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THÔNG SỐ KỸ THUẬT | |
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Channel Type | N |
Maximum Continuous Drain Current | 1.8 A |
Maximum Drain Source Voltage | 60 V |
Package Type | SOT-223 |
Mounting Type | Surface Mount |
Pin Count | 3 + Tab |
Maximum Drain Source Resistance | 300 mΩ |
Channel Mode | Enhancement |
Maximum Gate Threshold Voltage | 2V |
Minimum Gate Threshold Voltage | 0.8V |
Maximum Power Dissipation | 1.8 W |
Transistor Configuration | Single |
Maximum Gate Source Voltage | -20 V, +20 V |
Number of Elements per Chip | 1 |
Minimum Operating Temperature | -55 °C |
Width | 3.5mm |
Transistor Material | Si |
Length | 6.5mm |
Typical Gate Charge @ Vgs | 14 nC @ 10 V |
Height | 1.6mm |
Series | SIPMOS |
Maximum Operating Temperature | +150 °C |