SIRA90DP-T1-RE3 N-Channel MOSFET, 100 A, 30 V TrenchFET, 8-Pin SO Vishay [SIRA90DP-T1-RE3]; 134-9165
by Vishay
0₫
Mã kho: 1349165
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THÔNG SỐ KỸ THUẬT | |
---|---|
Channel Type | N |
Maximum Continuous Drain Current | 100 A |
Maximum Drain Source Voltage | 30 V |
Package Type | SO |
Mounting Type | Surface Mount |
Pin Count | 8 |
Maximum Drain Source Resistance | 1.15 mΩ |
Channel Mode | Enhancement |
Maximum Gate Threshold Voltage | 2V |
Minimum Gate Threshold Voltage | 0.8V |
Maximum Power Dissipation | 104 W |
Transistor Configuration | Single |
Maximum Gate Source Voltage | +20 V |
Number of Elements per Chip | 1 |
Height | 1.12mm |
Width | 5.26mm |
Series | TrenchFET |
Minimum Operating Temperature | -55 °C |
Forward Diode Voltage | 1.1V |
Maximum Operating Temperature | +150 °C |
Length | 6.25mm |
Typical Gate Charge @ Vgs | 102 nC @ 10 V |