SIRA14DP-T1-GE3 N-Channel MOSFET, 58 A, 30 V TrenchFET, 8-Pin PowerPAK SO Vishay [SIRA14DP-T1-GE3]; 165-6980
by Vishay
0₫
Mã kho: 1656980
Liên hệ để có giá tốt (Vietnam: 0898.332.898, E-mail: SKF@nguyenxuong.com)
THÔNG SỐ KỸ THUẬT | |
---|---|
Channel Type | N |
Maximum Continuous Drain Current | 58 A |
Maximum Drain Source Voltage | 30 V |
Package Type | PowerPAK SO |
Mounting Type | Surface Mount |
Pin Count | 8 |
Maximum Drain Source Resistance | 8.5 mΩ |
Channel Mode | Enhancement |
Minimum Gate Threshold Voltage | 1.1V |
Maximum Power Dissipation | 31.2 W |
Transistor Configuration | Single |
Maximum Gate Source Voltage | -16 V, +20 V |
Number of Elements per Chip | 1 |
Height | 1.12mm |
Width | 5.26mm |
Transistor Material | Si |
Series | TrenchFET |
Maximum Operating Temperature | +150 °C |
Minimum Operating Temperature | -55 °C |
Length | 6.25mm |
Typical Gate Charge @ Vgs | 19.4 nC @ 10 V |