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SQS966ENW-T1_GE3 Dual N-Channel MOSFET, 6 A, 60 V TrenchFET, 8-Pin 1212 Vishay Siliconix [SQS966ENW-T1_GE3]; 178-3851
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Mã kho: 1783851
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THÔNG SỐ KỸ THUẬT | |
---|---|
Channel Type | N |
Maximum Continuous Drain Current | 0.25 |
Maximum Drain Source Voltage | 60 V |
Package Type | 1212 |
Mounting Type | Surface Mount |
Pin Count | 8 |
Maximum Drain Source Resistance | 60 mΩ |
Channel Mode | Enhancement |
Maximum Gate Threshold Voltage | 2.5V |
Minimum Gate Threshold Voltage | 1.5V |
Maximum Power Dissipation | 27.8 W |
Maximum Gate Source Voltage | ±20 V |
Number of Elements per Chip | 2 |
Transistor Material | Si |
Height | 1.07mm |
Series | TrenchFET |
Maximum Operating Temperature | +175 °C |
Minimum Operating Temperature | -55 °C |
Length | 3.15mm |
Forward Diode Voltage | 1.1V |
Typical Gate Charge @ Vgs | 6.2 nC @ 10 V |
Automotive Standard | AEC-Q101 |
Width | 3.15mm |