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SiZ348DT-T1-GE3 Dual N-Channel MOSFET, 30 A, 30 V TrenchFET, 8-Pin PowerPAIR 3 x 3 Vishay Siliconix [SiZ348DT-T1-GE3]; 178-3702
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Mã kho: 1783702
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THÔNG SỐ KỸ THUẬT | |
---|---|
Channel Type | N |
Maximum Continuous Drain Current | 30 A |
Maximum Drain Source Voltage | 30 V |
Package Type | PowerPAIR 3 x 3 |
Mounting Type | Surface Mount |
Pin Count | 8 |
Maximum Drain Source Resistance | 10 mΩ |
Channel Mode | Enhancement |
Maximum Gate Threshold Voltage | 1V |
Minimum Gate Threshold Voltage | 2.4V |
Maximum Power Dissipation | 16.7 W |
Maximum Gate Source Voltage | -16 V, +20 V |
Number of Elements per Chip | 2 |
Minimum Operating Temperature | -55 °C |
Width | 3mm |
Transistor Material | Si |
Forward Diode Voltage | 1.2V |
Typical Gate Charge @ Vgs | 12.1 nC @ 10 V |
Height | 0.75mm |
Series | TrenchFET |
Maximum Operating Temperature | +150 °C |
Length | 3mm |