SISC06DN-T1-GE3 Dual N-Channel MOSFET, 40 A, 30 V TrenchFET, 8-Pin 1212 Vishay Siliconix [SISC06DN-T1-GE3]; 178-3694
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Mã kho: 1783694
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THÔNG SỐ KỸ THUẬT | |
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Channel Type | N |
Maximum Continuous Drain Current | 40 A |
Maximum Drain Source Voltage | 30 V |
Package Type | 1212 |
Mounting Type | Surface Mount |
Pin Count | 8 |
Maximum Drain Source Resistance | 4 mΩ |
Channel Mode | Enhancement |
Maximum Gate Threshold Voltage | 1V |
Minimum Gate Threshold Voltage | 2.1V |
Maximum Power Dissipation | 46.3 W |
Transistor Configuration | Single |
Maximum Gate Source Voltage | -16 V, +20 V |
Number of Elements per Chip | 2 |
Minimum Operating Temperature | -55 °C |
Width | 3.15mm |
Transistor Material | Si |
Forward Diode Voltage | 0.7V |
Length | 3.15mm |
Maximum Operating Temperature | +150 °C |
Series | TrenchFET |
Height | 1.07mm |
Typical Gate Charge @ Vgs | 38.5 nC @ 10 V |