SiR112DP-T1-RE3 N-Channel MOSFET, 133 A, 40 V TrenchFET, 8-Pin SO-8 Vishay Siliconix [SiR112DP-T1-RE3]; 178-3881
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Mã kho: 1783881
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| THÔNG SỐ KỸ THUẬT | |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 133 A |
| Maximum Drain Source Voltage | 40 V |
| Package Type | SO-8 |
| Mounting Type | Surface Mount |
| Pin Count | 8 |
| Maximum Drain Source Resistance | 2 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 1.1V |
| Minimum Gate Threshold Voltage | 2.4V |
| Maximum Power Dissipation | 62.5 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -16 V, +20 V |
| Number of Elements per Chip | 1 |
| Forward Diode Voltage | 1.1V |
| Transistor Material | Si |
| Width | 5mm |
| Minimum Operating Temperature | -55 °C |
| Maximum Operating Temperature | +150 °C |
| Height | 1.07mm |
| Length | 5.99mm |
| Typical Gate Charge @ Vgs | 59 nC @ 10 V |
| Series | TrenchFET |