SiR108DP-T1-RE3 N-Channel MOSFET, 45 A, 100 V TrenchFET, 8-Pin SO-8 Vishay Siliconix [SiR108DP-T1-RE3]; 178-3685
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Mã kho: 1783685
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THÔNG SỐ KỸ THUẬT | |
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Channel Type | N |
Maximum Continuous Drain Current | 45 A |
Maximum Drain Source Voltage | 100 V |
Package Type | SO-8 |
Mounting Type | Surface Mount |
Pin Count | 8 |
Maximum Drain Source Resistance | 10 mΩ |
Channel Mode | Enhancement |
Maximum Gate Threshold Voltage | 2V |
Minimum Gate Threshold Voltage | 3.6V |
Maximum Power Dissipation | 65.7 W |
Transistor Configuration | Single |
Maximum Gate Source Voltage | ±20 V |
Number of Elements per Chip | 1 |
Typical Gate Charge @ Vgs | 27.5 nC @ 10 V |
Height | 1.07mm |
Series | TrenchFET |
Maximum Operating Temperature | +150 °C |
Length | 5.99mm |
Forward Diode Voltage | 1.1V |
Transistor Material | Si |
Width | 5mm |
Minimum Operating Temperature | -55 °C |