SIHA2N80E-GE3 N-Channel MOSFET, 2.8 A, 800 V E-Series, 3-Pin TO-220 Vishay Siliconix [SIHA2N80E-GE3]; 178-3907
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Mã kho: 1783907
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| THÔNG SỐ KỸ THUẬT | |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 2.8 A |
| Maximum Drain Source Voltage | 800 V |
| Package Type | TO-220 |
| Mounting Type | Through Hole |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 2.75 Ω |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 4V |
| Minimum Gate Threshold Voltage | 2V |
| Maximum Power Dissipation | 29 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | ±30 V |
| Number of Elements per Chip | 1 |
| Length | 10.3mm |
| Series | E-Series |
| Height | 15.3mm |
| Forward Diode Voltage | 1.2V |
| Maximum Operating Temperature | +150 °C |
| Width | 4.7mm |
| Transistor Material | Si |
| Minimum Operating Temperature | -55 °C |
| Typical Gate Charge @ Vgs | 9.8 nC @ 10 V |