E Series Power MOSFET IPAK (TO-251), 144 [SIHU4N80AE-GE3]; 188-4943
by Vishay
0₫
Mã kho: 1884943
Liên hệ để có giá tốt (Vietnam: 0898.332.898, E-mail: SKF@nguyenxuong.com)
THÔNG SỐ KỸ THUẬT | |
---|---|
Channel Type | N |
Maximum Continuous Drain Current | 4.1 A |
Maximum Drain Source Voltage | 800 V |
Package Type | IPAK (TO-251) |
Mounting Type | Through Hole |
Pin Count | 3 |
Maximum Drain Source Resistance | 1.44 Ω |
Channel Mode | Enhancement |
Maximum Gate Threshold Voltage | 4V |
Minimum Gate Threshold Voltage | 2V |
Maximum Power Dissipation | 62.5 W |
Transistor Configuration | Single |
Maximum Gate Source Voltage | ±30 V |
Number of Elements per Chip | 1 |
Minimum Operating Temperature | -55 °C |
Width | 2.38mm |
Length | 6.73mm |
Maximum Operating Temperature | +150 °C |
Height | 6.22mm |
Typical Gate Charge @ Vgs | 11 nC @ 10 V |
Forward Diode Voltage | 1.2V |