SI5419DU-T1-GE3 P-Channel MOSFET, 9.9 A, 30 V, 8-Pin PowerPAK ChipFET Vishay [SI5419DU-T1-GE3]; 165-6326
by Vishay
0₫
Mã kho: 1656326
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THÔNG SỐ KỸ THUẬT | |
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Channel Type | P |
Maximum Continuous Drain Current | 9.9 A |
Maximum Drain Source Voltage | 30 V |
Package Type | PowerPAK ChipFET |
Mounting Type | Surface Mount |
Pin Count | 8 |
Maximum Drain Source Resistance | 33 mΩ |
Channel Mode | Enhancement |
Minimum Gate Threshold Voltage | 1.2V |
Maximum Power Dissipation | 31 W |
Transistor Configuration | Single |
Maximum Gate Source Voltage | -20 V, +20 V |
Number of Elements per Chip | 1 |
Minimum Operating Temperature | -55 °C |
Height | 0.85mm |
Width | 1.98mm |
Maximum Operating Temperature | +150 °C |
Transistor Material | Si |
Length | 3.08mm |
Typical Gate Charge @ Vgs | 30 nC @ 10 V |