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SI4900DY-T1-GE3 Dual N-Channel MOSFET, 4.3 A, 60 V, 8-Pin SOIC Vishay [SI4900DY-T1-GE3]; 165-3003
by Vishay
0₫
Mã kho: 1653003
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THÔNG SỐ KỸ THUẬT | |
---|---|
Channel Type | N |
Maximum Continuous Drain Current | 4.3 A |
Maximum Drain Source Voltage | 60 V |
Package Type | SOIC |
Mounting Type | Surface Mount |
Pin Count | 8 |
Maximum Drain Source Resistance | 58 mΩ |
Channel Mode | Enhancement |
Minimum Gate Threshold Voltage | 1V |
Maximum Power Dissipation | 2 W |
Transistor Configuration | Isolated |
Maximum Gate Source Voltage | -20 V, +20 V |
Number of Elements per Chip | 2 |
Minimum Operating Temperature | -55 °C |
Height | 1.55mm |
Typical Gate Charge @ Vgs | 13 nC @ 10 V |
Length | 5mm |
Transistor Material | Si |
Maximum Operating Temperature | +150 °C |
Width | 4mm |