SI3493DDV-T1-GE3 P-Channel MOSFET, 8 A, 20 V TrenchFET, 6-Pin TSOP Vishay [SI3493DDV-T1-GE3]; 134-9155
by Vishay
0₫
Mã kho: 1349155
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| THÔNG SỐ KỸ THUẬT | |
|---|---|
| Channel Type | P |
| Maximum Continuous Drain Current | 0.333333333333333 |
| Maximum Drain Source Voltage | 20 V |
| Package Type | TSOP |
| Mounting Type | Surface Mount |
| Pin Count | 6 |
| Maximum Drain Source Resistance | 51 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 1V |
| Minimum Gate Threshold Voltage | 0.4V |
| Maximum Power Dissipation | 3.6 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -8 V, +8 V |
| Number of Elements per Chip | 1 |
| Minimum Operating Temperature | -55 °C |
| Series | TrenchFET |
| Height | 1mm |
| Width | 1.7mm |
| Forward Diode Voltage | 1.2V |
| Typical Gate Charge @ Vgs | 34.8 nC @ 8 V |
| Maximum Operating Temperature | +150 °C |
| Length | 3.1mm |