SI2329DS-T1-GE3 P-Channel MOSFET, 6 A, 8 V, 3-Pin SOT-23 Vishay [SI2329DS-T1-GE3]; 812-3114
by Vishay
0₫
Mã kho: 8123114
Liên hệ để có giá tốt (Vietnam: 0898.332.898, E-mail: SKF@nguyenxuong.com)
THÔNG SỐ KỸ THUẬT | |
---|---|
Channel Type | P |
Maximum Continuous Drain Current | 0.25 |
Maximum Drain Source Voltage | 8 V |
Package Type | SOT-23 (TO-236) |
Mounting Type | Surface Mount |
Pin Count | 3 |
Maximum Drain Source Resistance | 120 mΩ |
Channel Mode | Enhancement |
Minimum Gate Threshold Voltage | 0.35V |
Maximum Power Dissipation | 2.5 W |
Transistor Configuration | Single |
Maximum Gate Source Voltage | -5 V, +5 V |
Number of Elements per Chip | 1 |
Typical Gate Charge @ Vgs | 19.3 nC @ 4.5 V |
Height | 1.02mm |
Width | 1.4mm |
Minimum Operating Temperature | -55 °C |
Maximum Operating Temperature | +150 °C |
Length | 3.04mm |
Transistor Material | Si |