SI2308BDS-T1-GE3 N-Channel MOSFET, 1.9 A, 60 V, 3-Pin SOT-23 Vishay [SI2308BDS-T1-GE3]; 919-0266
by Vishay
0₫
Mã kho: 9190266
Liên hệ để có giá tốt (Vietnam: 0898.332.898, E-mail: SKF@nguyenxuong.com)
THÔNG SỐ KỸ THUẬT | |
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Channel Type | N |
Maximum Continuous Drain Current | 1.9 A |
Maximum Drain Source Voltage | 60 V |
Package Type | SOT-23 |
Mounting Type | Surface Mount |
Pin Count | 3 |
Maximum Drain Source Resistance | 156 mΩ |
Channel Mode | Enhancement |
Minimum Gate Threshold Voltage | 1V |
Maximum Power Dissipation | 1.09 W |
Transistor Configuration | Single |
Maximum Gate Source Voltage | -20 V, +20 V |
Number of Elements per Chip | 1 |
Minimum Operating Temperature | -55 °C |
Typical Gate Charge @ Vgs | 2.3 nC @ 4.5 V, 4.5 nC @ 10 V |
Length | 3.04mm |
Maximum Operating Temperature | +150 °C |
Width | 1.4mm |
Transistor Material | Si |
Height | 1.02mm |