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STH150N10F7-2 N-Channel MOSFET, 110 A, 100 V DeepGate, STripFET, 3-Pin H2PAK STMicroelectronics [STH150N10F7-2]; 168-8819
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Mã kho: 1688819
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THÔNG SỐ KỸ THUẬT | |
---|---|
Channel Type | N |
Maximum Continuous Drain Current | 110 A |
Maximum Drain Source Voltage | 100 V |
Package Type | H2PAK |
Mounting Type | Surface Mount |
Pin Count | 3 |
Maximum Drain Source Resistance | 3.9 mΩ |
Channel Mode | Enhancement |
Maximum Gate Threshold Voltage | 4.5V |
Minimum Gate Threshold Voltage | 2.5V |
Maximum Power Dissipation | 250 W |
Transistor Configuration | Single |
Maximum Gate Source Voltage | -20 V, +20 V |
Number of Elements per Chip | 1 |
Width | 10.57mm |
Minimum Operating Temperature | -55 °C |
Series | DeepGate, STripFET |
Height | 4.8mm |
Maximum Operating Temperature | +175 °C |
Length | 10.4mm |
Typical Gate Charge @ Vgs | 117 nC @ 10 V |
Transistor Material | Si |