SCT2160KEC SiC N-Channel MOSFET, 22 A, 1200 V SCT2160KE, 3-Pin TO-247 ROHM [SCT2160KEC]; 124-6853
by ROHM
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Mã kho: 1246853
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THÔNG SỐ KỸ THUẬT | |
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Channel Type | N |
Maximum Continuous Drain Current | 22 A |
Maximum Drain Source Voltage | 1200 V |
Package Type | TO-247 |
Mounting Type | Through Hole |
Pin Count | 3 |
Maximum Drain Source Resistance | 226 mΩ |
Channel Mode | Enhancement |
Maximum Gate Threshold Voltage | 4V |
Minimum Gate Threshold Voltage | 1.6V |
Maximum Power Dissipation | 165 W |
Maximum Gate Source Voltage | -6 V, +22 V |
Number of Elements per Chip | 1 |
Width | 15.9mm |
Transistor Material | SiC |
Length | 20.95mm |
Typical Gate Charge @ Vgs | 62 nC @ 18 V |
Maximum Operating Temperature | +175 °C |
Series | SCT2160KE |
Height | 5.03mm |
Forward Diode Voltage | 4.1V |