RQ3G100GNTB N-Channel MOSFET, 10 A, 40 V RQ3G100GN, 8-Pin HSMT ROHM [RQ3G100GNTB]; 133-3295
by ROHM
0₫
Mã kho: 1333295
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THÔNG SỐ KỸ THUẬT | |
---|---|
Channel Type | N |
Maximum Continuous Drain Current | 0.416666666666667 |
Maximum Drain Source Voltage | 40 V |
Package Type | HSMT |
Mounting Type | Surface Mount |
Pin Count | 8 |
Maximum Drain Source Resistance | 18.3 mΩ |
Channel Mode | Enhancement |
Maximum Gate Threshold Voltage | 2.5V |
Minimum Gate Threshold Voltage | 1.2V |
Maximum Power Dissipation | 2 W |
Transistor Configuration | Single |
Maximum Gate Source Voltage | -20 V, +20 V |
Number of Elements per Chip | 1 |
Forward Diode Voltage | 1.2V |
Typical Gate Charge @ Vgs | 8.4 nC @ 10 V |
Maximum Operating Temperature | +150 °C |
Series | RQ3G100GN |
Length | 3.3mm |
Width | 3.1mm |
Height | 0.85mm |