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NTJD5121NT2G Dual N-Channel MOSFET, 290 mA, 60 V, 6-Pin SOT-363 ON Semiconductor [NTJD5121NT2G]; 802-1676
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Mã kho: 8021676
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THÔNG SỐ KỸ THUẬT | |
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Channel Type | N |
Maximum Continuous Drain Current | 290 mA |
Maximum Drain Source Voltage | 60 V |
Package Type | SOT-363 (SC-88) |
Mounting Type | Surface Mount |
Pin Count | 6 |
Maximum Drain Source Resistance | 2.5 Ω |
Channel Mode | Enhancement |
Maximum Gate Threshold Voltage | 2.5V |
Maximum Power Dissipation | 250 mW |
Transistor Configuration | Isolated |
Maximum Gate Source Voltage | -20 V, +20 V |
Number of Elements per Chip | 2 |
Maximum Operating Temperature | +150 °C |
Length | 2.2mm |
Typical Gate Charge @ Vgs | 0.9 nC @ 4.5 V |
Height | 1mm |
Width | 1.35mm |
Transistor Material | Si |
Minimum Operating Temperature | -55 °C |