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FQD2N100TM N-Channel MOSFET, 1.6 A, 1000 V QFET, 3-Pin DPAK ON Semiconductor [FQD2N100TM]; 671-0999
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Mã kho: 6710999
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THÔNG SỐ KỸ THUẬT | |
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Channel Type | N |
Maximum Continuous Drain Current | 1.6 A |
Maximum Drain Source Voltage | 1000 V |
Package Type | DPAK (TO-252) |
Mounting Type | Surface Mount |
Pin Count | 3 |
Maximum Drain Source Resistance | 9 Ω |
Channel Mode | Enhancement |
Minimum Gate Threshold Voltage | 3V |
Maximum Power Dissipation | 2.5 W |
Transistor Configuration | Single |
Maximum Gate Source Voltage | -30 V, +30 V |
Number of Elements per Chip | 1 |
Height | 2.3mm |
Length | 6.6mm |
Transistor Material | Si |
Maximum Operating Temperature | +150 °C |
Width | 6.1mm |
Typical Gate Charge @ Vgs | 12 nC @ 10 V |
Minimum Operating Temperature | -55 °C |
Series | QFET |