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FDP61N20 N-Channel MOSFET, 61 A, 200 V UniFET, 3-Pin TO-220AB ON Semiconductor [FDP61N20]; 671-4859
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Mã kho: 6714859
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THÔNG SỐ KỸ THUẬT | |
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Channel Type | N |
Maximum Continuous Drain Current | 61 A |
Maximum Drain Source Voltage | 200 V |
Package Type | TO-220AB |
Mounting Type | Through Hole |
Pin Count | 3 |
Maximum Drain Source Resistance | 41 mΩ |
Channel Mode | Enhancement |
Minimum Gate Threshold Voltage | 3V |
Maximum Power Dissipation | 417 W |
Transistor Configuration | Single |
Maximum Gate Source Voltage | -30 V, +30 V |
Number of Elements per Chip | 1 |
Minimum Operating Temperature | -55 °C |
Width | 4.83mm |
Length | 10.67mm |
Maximum Operating Temperature | +150 °C |
Series | UniFET |
Height | 9.4mm |
Transistor Material | Si |
Typical Gate Charge @ Vgs | 58 nC @ 10 V |