FDP4D5N10C N-Channel MOSFET, 128 A, 100 V, 3-Pin TO-220 ON Semiconductor [FDP4D5N10C]; 181-1859
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Mã kho: 1811859
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| THÔNG SỐ KỸ THUẬT | |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 128 A |
| Maximum Drain Source Voltage | 100 V |
| Package Type | TO-220 |
| Mounting Type | Through Hole |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 4.5 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 4V |
| Minimum Gate Threshold Voltage | 2V |
| Maximum Power Dissipation | 150 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | ±20 V |
| Number of Elements per Chip | 1 |
| Minimum Operating Temperature | -55 °C |
| Length | 10.36mm |
| Forward Diode Voltage | 1.3V |
| Maximum Operating Temperature | +175 °C |
| Height | 15.21mm |
| Typical Gate Charge @ Vgs | 48 nC @ 10 V |
| Width | 4.67mm |